The electrical properties of barium strontium titanate (Ba,Sr)TiO3 thin film capacitor and Metal-(Ba,Sr)TiO3-Semiconductor Field Effect Transistors
碩士 === 國立清華大學 === 電子工程研究所 === 89 === In this work , the electrical characteristics of Au/BST/Silicon(P-type) (MIS) capacitors and n-channel metal gate metal-oxide-semiconductor field effect transistors (MOSFET) with (BaxSr1-x)TiO3(BST) gate dielectric are investigated. The BST thin films...
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ndltd-TW-089NTHU04280372016-07-04T04:17:18Z http://ndltd.ncl.edu.tw/handle/75662932271929339177 The electrical properties of barium strontium titanate (Ba,Sr)TiO3 thin film capacitor and Metal-(Ba,Sr)TiO3-Semiconductor Field Effect Transistors 鈦酸鍶鋇薄膜電容器與金屬/鈦酸鍶鋇/半導體場效電晶體之電性分析 Yu-Rung Liu 劉育榮 碩士 國立清華大學 電子工程研究所 89 In this work , the electrical characteristics of Au/BST/Silicon(P-type) (MIS) capacitors and n-channel metal gate metal-oxide-semiconductor field effect transistors (MOSFET) with (BaxSr1-x)TiO3(BST) gate dielectric are investigated. The BST thin films are deposited by magnetron control RF sputtering. The perovskite phase was confirmed by X-Ray Diffraction spectra. The dielectric constant of 140nm thick BST thin film is around 70~80 at 100kHz and decreases with increasing frequency. The leakage current is around 10-7 A/cm2 in the range of 0~3 V and increases rapidly with increasing temperature. The I-V and C-V characteristics of MIS capacitors are discussed. The conduction current mechanism of BST films at different temperatures is studied. For MIS structure, Poole-Frenkel is dominant in the room temperature, when the device is negative biased (operated in accumulation region). The IDS-VDS and IDS—VGS characteristics are measured from MOSFET with BST gate dielectric. The electron mobility obtained from gm versus VG plot was about 206 cm2/V·s. The subthreshold swing was 136.7 mV/dec. The interface density, surface recombination velocity and the minority carrier lifetime measured from gated diodes. Comparison with conventional MOSFETs with SiO2 gate oxide was made. Joseph Ya-Min Lee 李雅明 2001 學位論文 ; thesis 120 zh-TW |
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碩士 === 國立清華大學 === 電子工程研究所 === 89 === In this work , the electrical characteristics of Au/BST/Silicon(P-type) (MIS) capacitors and n-channel metal gate metal-oxide-semiconductor field effect transistors (MOSFET) with (BaxSr1-x)TiO3(BST) gate dielectric are investigated. The BST thin films are deposited by magnetron control RF sputtering. The perovskite phase was confirmed by X-Ray Diffraction spectra. The dielectric constant of 140nm thick BST thin film is around 70~80 at 100kHz and decreases with increasing frequency. The leakage current is around 10-7 A/cm2 in the range of 0~3 V and increases rapidly with increasing temperature. The I-V and C-V characteristics of MIS capacitors are discussed.
The conduction current mechanism of BST films at different temperatures is studied. For MIS structure, Poole-Frenkel is dominant in the room temperature, when the device is negative biased (operated in accumulation region).
The IDS-VDS and IDS—VGS characteristics are measured from MOSFET with BST gate dielectric. The electron mobility obtained from gm versus VG plot was about 206 cm2/V·s. The subthreshold swing was 136.7 mV/dec. The interface density, surface recombination velocity and the minority carrier lifetime measured from gated diodes. Comparison with conventional MOSFETs with SiO2 gate oxide was made.
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Joseph Ya-Min Lee |
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Joseph Ya-Min Lee Yu-Rung Liu 劉育榮 |
author |
Yu-Rung Liu 劉育榮 |
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Yu-Rung Liu 劉育榮 The electrical properties of barium strontium titanate (Ba,Sr)TiO3 thin film capacitor and Metal-(Ba,Sr)TiO3-Semiconductor Field Effect Transistors |
author_sort |
Yu-Rung Liu |
title |
The electrical properties of barium strontium titanate (Ba,Sr)TiO3 thin film capacitor and Metal-(Ba,Sr)TiO3-Semiconductor Field Effect Transistors |
title_short |
The electrical properties of barium strontium titanate (Ba,Sr)TiO3 thin film capacitor and Metal-(Ba,Sr)TiO3-Semiconductor Field Effect Transistors |
title_full |
The electrical properties of barium strontium titanate (Ba,Sr)TiO3 thin film capacitor and Metal-(Ba,Sr)TiO3-Semiconductor Field Effect Transistors |
title_fullStr |
The electrical properties of barium strontium titanate (Ba,Sr)TiO3 thin film capacitor and Metal-(Ba,Sr)TiO3-Semiconductor Field Effect Transistors |
title_full_unstemmed |
The electrical properties of barium strontium titanate (Ba,Sr)TiO3 thin film capacitor and Metal-(Ba,Sr)TiO3-Semiconductor Field Effect Transistors |
title_sort |
electrical properties of barium strontium titanate (ba,sr)tio3 thin film capacitor and metal-(ba,sr)tio3-semiconductor field effect transistors |
publishDate |
2001 |
url |
http://ndltd.ncl.edu.tw/handle/75662932271929339177 |
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