Design of Straddle-Gate Structure for Sub-100nm MOS Transistors
碩士 === 國立清華大學 === 電子工程研究所 === 89 === As device scales down, some constraints must be overcome. Straddle-gate transistor is not limited by the source/drain extension region and leads another path to smaller devices. A comprehensive investigation of the transistor characteristics of Straddl...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/36857486690733249039 |