Design Optimization of BiNOR Flash Memory

博士 === 國立清華大學 === 電機工程學系 === 89 === In this study, a performance analysis methodology is first proposed for BiNOR flash memory. The BiNOR flash memory means that the bi-directional Fowler-Nordheim tunneling effect is adopted for programming/erasing operations in a NOR-type array configuration. With...

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Bibliographic Details
Main Authors: Amy Hsoi-Fen Chou, 周秀芬
Other Authors: Huey-Liang Hwang
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/69196496541208080764