碳化矽化學氣相鍍膜研究
碩士 === 國立海洋大學 === 光電科學研究所 === 89 === Abstract The crystalline β-SiC was grown at 1150℃ to 1300℃ by a cold wall vertical chemical vapor deposition system using C3H8 and SiH2Cl2 as source gas, deposited on high purity graphite substrates at one atmo- sphere. The objects of this study are to...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51452205156804481536 |