碳化矽化學氣相鍍膜研究

• Main Author: 張日曜
• Other Authors: 江海邦
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/51452205156804481536

碩士 === 國立海洋大學 === 光電科學研究所 === 89 === Abstract The crystalline β-SiC was grown at 1150℃ to 1300℃ by a cold wall vertical chemical vapor deposition system using C3H8 and SiH2Cl2 as source gas, deposited on high purity graphite substrates at one atmo- sphere. The objects of this study are to investigate the effects of deposition parameters on the growth rate, chemical composition, surface morphology and preferred orientation of the SiC films. The growth rate, reaction components, surface morphology are investigated by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), and secondary ion mass spectrometry(SIMS). The experimental results showed that the growth rate ofβ-SiC increased with increasing deposition temperature and concentration of reaction species. The preferred orientation of the deposition film changed from (111) to (220) with increasing deposition rate. The morphology was influenced by deposition temperature and the concentration of reaction gas.