Ta2O5介電薄膜與Pb(Zr,Ti)O3強介電薄膜之低溫製備與特性分析
碩士 === 國立臺灣大學 === 化學工程學研究所 === 89 === Ferroelectric thin films have been widely expected for nonvolatile ferroelectric random access memory (FeRAM) application. The deposition processes of Pb(Zr,Ti)O3 (PZT) thin films have been developed by using RF-magnetron sputtering method. The crysta...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88279429659228907154 |