Electric Property Improvement and Boron Penetration Suppression in Metal-Oxide-Si Capacitors by Amorphous-Si Gate Electrode and Two-Step Nitridation
博士 === 國立臺灣大學 === 電機工程學研究所 === 89 === The improvement of electric property and reduction of boron penetration in metal-oxide-Si (MOS) capacitors are clearly achieved by the combination of a gate electrode deposited using amorphous Si (a-Si) and a gate oxynitride formed by a two-step N2O n...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56048023417327035515 |