The Investigation of InAs/GaAs Quantum Dot Infrared Photodetector

碩士 === 國立臺灣大學 === 電機工程學研究所 === 89 === In this thesis, the electrical and optical characteristics of InAs/GaAs quantum dot infrared photodetectors (QDIP) prepared by MBE have been studied in detail. The device fabrication processes and measurement system are described. Several phenomena...

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Bibliographic Details
Main Authors: TSAI, YAO-JEN, 蔡曜任
Other Authors: Si-Chen Lee
Format: Others
Language:en_US
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/46735982971651626160