Low Temperature Growth of SiC Films by Electron Cyclotron Resonance Chemical Vapor Deposition
博士 === 國立臺灣科技大學 === 化學工程系 === 89 === The influence of various deposition parameters for electron cyclotron resonance chemical vapor deposition such as total pressure, microwave power, CH4/SiH4 flow ratio, substrate temperature, and carrier gases was systematically investigated. The formation of the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84712666989953135054 |