Optimal Design of Trench-Gate Power MOSFET's
碩士 === 國立臺灣科技大學 === 電子工程系 === 89 === Abstract Power MOSFET’s are important discrete devices for a variety of power conversion applications in the voltage range below 200 V because of low conduction power loss, high input impedance, and high switching speed. Due to these adva...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93425617005975900499 |