Mechanistic Study of Thermally Immobilized Cr- or Cu-containing SiO2
碩士 === 東海大學 === 環境科學系 === 89 === X-ray absorption spectroscope (XAS), X-ray diffraction (XRD), scanning electron microscope/energy dispersive spectrometer (SEM/EDS), and the toxicity characteristic leaching procedure (TCLP) technique, were used to study the effect of surface area (SL: 2 and SH: 378...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2001
|
Online Access: | http://ndltd.ncl.edu.tw/handle/46234999715445772204 |
id |
ndltd-TW-089THU00518002 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-089THU005180022015-10-13T12:10:00Z http://ndltd.ncl.edu.tw/handle/46234999715445772204 Mechanistic Study of Thermally Immobilized Cr- or Cu-containing SiO2 含鉻或銅二氧化矽熱安定化機制 CHIU SHU-YUAN 邱淑媛 碩士 東海大學 環境科學系 89 X-ray absorption spectroscope (XAS), X-ray diffraction (XRD), scanning electron microscope/energy dispersive spectrometer (SEM/EDS), and the toxicity characteristic leaching procedure (TCLP) technique, were used to study the effect of surface area (SL: 2 and SH: 378 m2/g) of SiO2 on the thermal immobilization of 0.6295 mole chromium in 1.0 kg Cr(Ⅵ)-sorbed SiO2 or 0.6295 mole copper in 1.0 kg Cu(Ⅱ)-sorbed SiO2 that had been heated at 105 for 3-5days, or 500, 700, 900, or 1100 ℃ for 2 hours. Our data indicate the followings. In the Cr(Ⅵ)-sorbed aspects, the Cr(Ⅵ)-sorbed SL thermally treated at 500-1100 ℃ always leached less Cr than the SH. In the contrast, opposite results were observed for the samples heated at 105 ℃. Cr-concentrated region was formed, as detected with SEM/EDS technique, on Cr(Ⅵ)-sorbed SL after the thermal treatment at 500-1100 ℃, but not formed on the corresponding SH. The sorption of Cr(Ⅵ) onto both SH and SL could retard the thermal reduction of Cr(Ⅵ) at 500-1100 ℃ as evidenced by the extent of variation of pre-edge intensity of XAS spectra. The extent of retardation of Cr(Ⅵ) reduction to Cr2O3 increased with the amount of Cr(Ⅵ) sorption on unit mass of SiO2. In the Cu(Ⅱ)-sorbed aspects, the Cu(Ⅱ)-sorbed SL thermally treated at 500-1100 ℃ always leached less Cu(Ⅱ) than the SH. In the contrast, opposite results were observed for the samples heated at 105 ℃. Cu-concentrated region was formed, as detected with SEM/EDS technique, on Cu(Ⅱ)-sorbed SL (500-1100 ℃)and SH (500-900 ℃). The main species of Cu(Ⅱ)-sorbed SL is Cu(OH)2 for the samples heated at 105 ℃. After the thermal treatment at 500-1100 ℃, the Cu(OH)2 species of was transformed to CuO. WEI YU-LING 魏玉麟 2001 學位論文 ; thesis 120 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 東海大學 === 環境科學系 === 89 === X-ray absorption spectroscope (XAS), X-ray diffraction (XRD), scanning electron microscope/energy dispersive spectrometer (SEM/EDS), and the toxicity characteristic leaching procedure (TCLP) technique, were used to study the effect of surface area (SL: 2 and SH: 378 m2/g) of SiO2 on the thermal immobilization of 0.6295 mole chromium in 1.0 kg Cr(Ⅵ)-sorbed SiO2 or 0.6295 mole copper in 1.0 kg Cu(Ⅱ)-sorbed SiO2 that had been heated at 105 for 3-5days, or 500, 700, 900, or 1100 ℃ for 2 hours. Our data indicate the followings.
In the Cr(Ⅵ)-sorbed aspects, the Cr(Ⅵ)-sorbed SL thermally treated at 500-1100 ℃ always leached less Cr than the SH. In the contrast, opposite results were observed for the samples heated at 105 ℃. Cr-concentrated region was formed, as detected with SEM/EDS technique, on Cr(Ⅵ)-sorbed SL after the thermal treatment at 500-1100 ℃, but not formed on the corresponding SH. The sorption of Cr(Ⅵ) onto both SH and SL could retard the thermal reduction of Cr(Ⅵ) at 500-1100 ℃ as evidenced by the extent of variation of pre-edge intensity of XAS spectra. The extent of retardation of Cr(Ⅵ) reduction to Cr2O3 increased with the amount of Cr(Ⅵ) sorption on unit mass of SiO2.
In the Cu(Ⅱ)-sorbed aspects, the Cu(Ⅱ)-sorbed SL thermally treated at 500-1100 ℃ always leached less Cu(Ⅱ) than the SH. In the contrast, opposite results were observed for the samples heated at 105 ℃. Cu-concentrated region was formed, as detected with SEM/EDS technique, on Cu(Ⅱ)-sorbed SL (500-1100 ℃)and SH (500-900 ℃). The main species of Cu(Ⅱ)-sorbed SL is Cu(OH)2 for the samples heated at 105 ℃. After the thermal treatment at 500-1100 ℃, the Cu(OH)2 species of was transformed to CuO.
|
author2 |
WEI YU-LING |
author_facet |
WEI YU-LING CHIU SHU-YUAN 邱淑媛 |
author |
CHIU SHU-YUAN 邱淑媛 |
spellingShingle |
CHIU SHU-YUAN 邱淑媛 Mechanistic Study of Thermally Immobilized Cr- or Cu-containing SiO2 |
author_sort |
CHIU SHU-YUAN |
title |
Mechanistic Study of Thermally Immobilized Cr- or Cu-containing SiO2 |
title_short |
Mechanistic Study of Thermally Immobilized Cr- or Cu-containing SiO2 |
title_full |
Mechanistic Study of Thermally Immobilized Cr- or Cu-containing SiO2 |
title_fullStr |
Mechanistic Study of Thermally Immobilized Cr- or Cu-containing SiO2 |
title_full_unstemmed |
Mechanistic Study of Thermally Immobilized Cr- or Cu-containing SiO2 |
title_sort |
mechanistic study of thermally immobilized cr- or cu-containing sio2 |
publishDate |
2001 |
url |
http://ndltd.ncl.edu.tw/handle/46234999715445772204 |
work_keys_str_mv |
AT chiushuyuan mechanisticstudyofthermallyimmobilizedcrorcucontainingsio2 AT qiūshūyuàn mechanisticstudyofthermallyimmobilizedcrorcucontainingsio2 AT chiushuyuan hánluòhuòtóngèryǎnghuàxìrèāndìnghuàjīzhì AT qiūshūyuàn hánluòhuòtóngèryǎnghuàxìrèāndìnghuàjīzhì |
_version_ |
1716854486007283712 |