TCAD Simulator Used for C-R Method Verification and S/D Engineering Optimization of Advanced CMOS devices
碩士 === 國立臺北科技大學 === 機電整合研究所 === 89 === Channel length of MOSFET’s is one of the most important device parameters to processing technologists and device engineers in their evaluation of process control, device performance and device scaling for next-generation MOS technologies. In a current MOS trans...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27241625827167918429 |