X-ray Absorption Spectroscopy Studies of Amorphous Si-C-N Thin Films
碩士 === 淡江大學 === 物理學系 === 89 === This study measured x-ray-absorption near edge structure (XANES) spectra of Si-C-N thin films with different sputtering energy and carbon content at the C K-edge using the sample drain current mode and at the N K-edge using the fluorescence mode. We have fo...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79062975025166959851 |
| Summary: | 碩士 === 淡江大學 === 物理學系 === 89 === This study measured x-ray-absorption near edge structure (XANES) spectra of Si-C-N thin films with different sputtering energy and carbon content at the C K-edge using the sample drain current mode and at the N K-edge using the fluorescence mode. We have found out that the spectra of Si-C-N thin films at the C K-edge are similar with b-SiC and when the carbon content increasing, the p*-like peak become more smaller and has a small shift to high energy. It’s suggesting that carbon atoms in the Si-C-N films are bounding in C=C or graphite-like structure. From the N K-edge of the Si-C-N can be see a broader feature in the XANES spectra seems like the spectrum of a-Si3N4. At high carbon content, there are some fine structure appear at the energy about 400.1eV, resulting from the presence of N=C. The Young’s modulus and density decrease respectively as the carbon content of the films increases maybe because of the carbon atoms substitution the silicon atoms and bounded with nitrogen or carbon atoms and become more C=C or N=C structure.
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