The Optoelectronic Properties Of Borosilicate Glass Materials And Device
碩士 === 大同大學 === 光電工程研究所 === 89 === This thesis investigated the furnace-annealing process at 500℃ for ranging from 30 to 120 min at 30 min increments was employed to modify the semi-conducting property of the silicon-implanted Borosilicate glass samples. In our experiment, the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96179983253539768626 |