Study on Low Dielectric Constant Material For ULSI Applications

• Main Authors: Kai-Huang Chen, 陳開煌
• Other Authors: Jian-Yang Lin
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/49694535210136444113

碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 89 === Study on Low Dielectric Constant Material For ULSI Applications Student: Kai-Huang Chen Advisor : Dr. Jian-Yang Lin Dr. Ting-Chang Chang Institute of Electronics and Information Engineering, Nation Yunlin University of Science and Technology Abstract Interconnect delay is a performance-liming factor for ULSI circuits when feature size is scaled into the deep sub-micron region. Using low dielectric constant material for the interlayer insulator is an effective way to solve the problem. We study low dielectric constant material, methylsilsesquioxane (MSQ) and hydrogen silsesquioxane (HSQ) spin on polymer.The intrinsic properties and thermal stability of this spin on glass are investigated.In this study, processing for sacrificial polymer layer has been developed using air-cavity test structure. Thermal decomposition of the polymer was then used to form the porous MSQ and HSQ films. After curing treatments, the dielectric constants of the porous MSQ and HSQ films with NB mixtures have been reduced from 2.9 ~ 2.7 to 2.4 ~ 2.2. In the MSQ/HSQ materials, the dominant leakage current mechanism of the films with C2H5OH solvent is the Pool-Frenkel effect in the low electric field. However, the films with C4H9OH solvent is the Schottky effect in the low electric field. We can find the high leakage current using C2H5OH solvent more than C4H9OH solvent in these film electric characteristics. We be able to find the high dielectric constant using C4H9OH solvent more than C2H5OH solvent in these film electric characteristicsIn addition, we apply N2O plasma treatment to modify the characteristic of HSQ for O2 plasma resistant by electrical and material analysis. The quality of low dielectric constant HSQ films is significantly improved by N2O plasma pre-treatment.