Nonlinear MESFET Model based on Bias Dependent S Parameter Measurement
碩士 === 國防大學中正理工學院 === 電子工程研究所 === 90 === With the fast growth in the RF wireless communication market, the demand for high performance and low cost solutions of RFIC is rising. To design an optimal RF circuit, accurate MESFET model is required. The accuracy of such model depends not only...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2002
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Online Access: | http://ndltd.ncl.edu.tw/handle/61827556803458641960 |