Nonlinear MESFET Model based on Bias Dependent S Parameter Measurement

碩士 === 國防大學中正理工學院 === 電子工程研究所 === 90 === With the fast growth in the RF wireless communication market, the demand for high performance and low cost solutions of RFIC is rising. To design an optimal RF circuit, accurate MESFET model is required. The accuracy of such model depends not only...

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Bibliographic Details
Main Authors: Jing-Xiu Zheng, 鄭景修
Other Authors: L.B. Chang
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/61827556803458641960