加速熱載子可靠度量測模型之研究
碩士 === 中華大學 === 科技管理研究所 === 90 === In this thesis, we employed the method of wafer level test with high stress voltage to accelerate the device degradation. Then, we utilized the accelerated factor to get the device lifetime that we operate under normal voltage. We found that this new method saves u...
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| Format: | Others |
| Language: | zh-TW |
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2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48041100502024861068 |