Characterizations of rare earth element treated InP epilayer grown by LPE
碩士 === 中原大學 === 電子工程研究所 === 90 === From the mid-1970s, many experts had great interest in III-V compound semiconductor materials. The InP is the semiconductor material that is suit applied industrially for the fabrication of high speed and high frequencies devices. InP and InP-based alloys have b...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81370118259719991919 |