Characterizations of rare earth element treated InP epilayer grown by LPE

• Main Authors: Hong-Wei Liang, 梁宏偉
• Other Authors: Wu-yih Uen
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/81370118259719991919

碩士 === 中原大學 === 電子工程研究所 === 90 === From the mid-1970s, many experts had great interest in III-V compound semiconductor materials. The InP is the semiconductor material that is suit applied industrially for the fabrication of high speed and high frequencies devices. InP and InP-based alloys have been considerable promising candidates for wider application in many electronic and photonic devices. Rare-Earth (RE) treated III-V compound semiconductors have been of great interest recently. Many researches had discovered that the RE elements have a strong affinity to oxygen and other group VI elements, the effect can be used to perform effective gettering of the background donors and acceptors in III-V semiconductors. In this study, we grow InP on the InP substrate by liquid phase epitaxy(LPE) in different temperature. We try to confer the influence of the surface morphology in different temperature. Besides, we add different rare-earth elements(Er and Yb) into the growth solution to investigate the influence of rare earth elements. Optical and electrical characterizations of InP epilayers indicate that both optical and electrical properties of InP epilayers are improved by rare-earth treatment. When Yb adding amount is over 0.1364wt%, the conductivity of InP layers will smoothly change from n-type to p-type. Finally, we could directly get high quality p-type InP epilayer by suitable treatment of Yb species.