Optical studies of semiconductor heterostructures
碩士 === 中原大學 === 應用物理研究所 === 90 === ABSTRACT Contactless electroreflectance(CER) and photoluminescence(PL) measurements were used to study the structural properties of Ho-doped InGaAsP epilayers and InGaN/GaN multiple quantum wells(MQWs) light emitting devices(LEDs). The broadening parameter of the I...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48130430619752008602 |