A feasibility study of using Ta-Co-N ternary thin film as diffusion-barrier and catalytic layers for copper processing
碩士 === 逢甲大學 === 材料科學所 === 90 === Abstract Thin film of Co and Co-N were sputter deposited at different nitrogen / argon gas pressure ratios on (100) silicon substrates which did not heat (room temperature) and heat with 300 ℃. The properties of these films, particularly electric conductivity, micros...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/by3q32 |