Extraction of Parasitic Inductances of RF Field-Effect Transistors
碩士 === 逢甲大學 === 電子工程所 === 90 === ABSTRACT Novel methods for determining the parasitic inductances of MESFETs, HEMTs, and MOSFETs are proposed. In this thesis, we utilize only one set of the pinched-off cold-FET S-parameters to directly contain the extrinsic inductances of MESFETs and HEMTs. Moreov...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/xqnz2s |