| Summary: | 碩士 === 國立中興大學 === 材料工程學研究所 === 90 === Thin films of aluminum nitride exhibit a number of interesting features such as high thermal conductivity, high electrical resistivity, high surface acoustic wave speed, high hardness, high melting points, wide band gap and chemical inertness. Owing to its excellent features, recently, AlN films have been considered a capable material for a variety of applications in different fields.
In this study, the AlN films were deposited on Si substrate using a dual ion beam sputtering (DIBS) system. The DIBS system used consists of a Kaufman ion gun which bombards the aluminum target, and an End-Hall ion gun which uses a nitrogen ion beam perpendicular to the substrate surface. The Kaufman ion gun and the End-Hall ion gun were separately adjustable. In order to obtain the C-axis oriented and smooth surface of AlN films, the ion beam voltage and substrate temperature were independently controllable.
Finally, the results showed that excellent AlN films which possess the C-axis oriented and uniform concentration were successfully synthesized using the follow parameters: ion beam voltage was maintained at 800V; the ratio of N2/Ar was 3; the working pressure was kept at 6- 6.5×10-4Torr and the substrate temperature was heated to 4500C.
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