The Study of Hot Carrier Induced Degradation on 0.1μm SOI CMOSFET with 2nm Thin Gate Oxide
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 90 === Abstract In this thesis, the target has been paid on the study of hot carrier effect on SOI CMOSFETs. The samples are N-and P-MOSFETs by 0.1μm technology on 8” SOI wafer. As devices scaling down to deep-submicron region, the dimension shrinkage is more than...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/9u2225 |