III-Nitride Based Semiconductors and Related Optical Electronic Devices Grown by Metalorganic Vapor Phase Epitaxy
博士 === 國立成功大學 === 電機工程學系碩博士班 === 90 === In this dissertation, the growth and characteristics of the III-V nitrides semiconductor that consist of undoped GaN, n-type GaN, p-type GaN, Si-doped InGaN layers, and InGaN/GaN MQW had been systematically studied. Using MOCVD techniques, the InGaN/GaN MQW gr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34374612612237760140 |