Analytic Modeling for Device Characteristics of Doped-Channel Field-Effect Transistors and High Electron Mobility Transistors
博士 === 國立成功大學 === 電機工程學系碩博士班 === 90 === In this dissertation, we have proposed analytic theories for the δ-HEMT and PDCFET by solving the two-dimensional Poison equation in a straightforward manner. The velocity overshoot phenomenon associated within the low effective mass and large Γ-L separation...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bv4mpb |