The Growth Mechanism of GaN V-defect and Novel Method for GaN Epilayer Transfer
碩士 === 國立交通大學 === 材料科學與工程系 === 90 === This thesis investigates and discusses the formation mechanism of V-defect on GaN epilayer based on the appearance of large V-defect. Although facets and crystal shape of large V-defect and dot patternd GaN ELOG are similar, they are not the same from the thermo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55113576717688067712 |