A AlGaN/GaN HEMT with WNx T-gate for high temperature application
碩士 === 國立交通大學 === 材料科學與工程系 === 90 === GaN HEMTs have enormous potential for high-power solid-state amplifier application at microwave frequencies, due to their characteristics such as high breakdown field, high electron saturation velocity and high operating temperature. These characteris...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54801647939033822147 |