Effects of the SbTe crystallization-induced layer on crystallization behaviors and properties of the GeSbTe disks
碩士 === 國立交通大學 === 材料科學與工程系 === 90 === The conventional phase-change DVD-RAM is generally fabricated by the sputtering process, which has a drawback of requiring an initialization process to change the as-deposited recording layer in the disk from amorphous to crystalline phases, before th...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76920019136956438478 |