Integration of Cu(Mg)-SiLK for Multilevel Interconnects and Promotion of Electromigration Reliability
碩士 === 國立交通大學 === 電子工程系 === 90 === The adhesion between dielectric material and Cu(Mg) is larger than Cu. Cu or Cu(Mg) will oxidize in air furnace, but won’t oxidize in vacuum furnace. Cu(Mg) can resist metal diffuse to oxide. After annealing, the resistivity of Cu or Cu(Mg) decreases and...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10418477271235245101 |