Formation of Ni Germano-Silicide on Single Crystalline Si0.3Ge0.7/Si
碩士 === 國立交通大學 === 電子工程系 === 90 === We have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 / on both P+N and N+P junctions, which is much smaller than Co germano-silicide. Besides, small junction leakage currents of 3...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97151134833356358368 |