Formation of Ni Germano-Silicide on Single Crystalline Si0.3Ge0.7/Si

碩士 === 國立交通大學 === 電子工程系 === 90 === We have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 / on both P+N and N+P junctions, which is much smaller than Co germano-silicide. Besides, small junction leakage currents of 3...

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Bibliographic Details
Main Authors: Wu Kuan Long, 吳冠龍
Other Authors: Albert Chin
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/97151134833356358368