Ultra-Shallow Junction Formation for Nano MOS Devices Using Amorphous Silicon Capping Layer
碩士 === 國立交通大學 === 電子工程系 === 90 === In this thesis, we have proposed a new ultra-shallow junction formation method for nano-MOS technology applications. As device dimension scales down, the short channel effects become more serious. Formation of ultra-shallow junctions is essential to mini...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80161201359276452221 |