Characteristics and Process Technologies of GaN-based MISFET Devices
碩士 === 國立交通大學 === 電子工程系 === 90 === The wide bandgap semiconductor GaN, which has commonly used in the optical applications, is considered to have potentials in the high power and high temperature electron device applications. There are still many challenges for the fabrication of GaN-base...
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34888453741487058252 |