Characteristics and Process Technologies of GaN-based MISFET Devices

• Main Authors: Yu Lin Chen, 陳宥霖
• Other Authors: K. M. Chang
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/34888453741487058252

碩士 === 國立交通大學 === 電子工程系 === 90 === The wide bandgap semiconductor GaN, which has commonly used in the optical applications, is considered to have potentials in the high power and high temperature electron device applications. There are still many challenges for the fabrication of GaN-based electron device. In this thesis, we propose a new gate dielectric for use in the GaN-based MISFETs. SiN was deposited at 300oC as the insulating layer of a GaN-based MISFET by using electron cyclotron chemical vapor deposition (ECR-CVD) with SiH4/N2 gas flow ratio of 7/43. The deposited film had the refractive index of 1.95~2.0 at the wavelength of 400nm~700nm and relative dielectric constant of 6. The interface state densities of the SiN film were less than 3.1x1011cm-2eV-1 around the midgap and the breakdown field was higher than 11.6MV/cm. The p-type depletion mode MISFET was also demonstrated. The optimum annealing temperature was 590oC by using the RTA, and the contact resistance could be achieved in the order of 10-3 Ωcm2 at 300oC.