Fabrication and Characterization of SOI FinFETs with Schottky Barrier Source/Drain
碩士 === 國立交通大學 === 電資學院學程碩士班 === 90 === In this thesis, we proposed and demonstrated a novel nano-scale silicon-on-insulator (SOI) FinFET device. The new device features a metallic silicided source/drain and field-induced S/D extensions. For the device fabrication, the patterning of nano-s...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05591667974984877700 |