Optical analysis of InGaN green LED by using binary and quaternary barrier
碩士 === 國立中央大學 === 電機工程研究所 === 90 === Abstract In this thesis, InGaN/GaN and InGaN/AlInGaN multiple quantum well (MQW) light emitting diode were grown by low pressure metal-organic chemical vapor deposition(MOCVD). There are two versions of the emission mechanism in multiple quantum well. One is dom...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19190804575592879601 |