The Investigation for Silicon Nitride Thin Film Deposited at Room Temperature

碩士 === 國立中央大學 === 光電科學研究所 === 90 === Advantage silicon nitride by CO2 laser assisted plasma enhanced chemical vapor deposition: low Si-H and N-H contained in a-SiNx:H film. Low surface roughness Prevent from moisture and oxidation Refraction index is stable Laser power will best assist at 40W. Stab...

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Bibliographic Details
Main Authors: Jia-Hung Suen, 孫嘉鴻
Other Authors: none
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/33445676531941039359