Probing the High-κ Dielectric-Semiconductor interfaces by X-ray Photoelectron Spectroscopy
碩士 === 國立中山大學 === 光電工程研究所 === 90 === The purpose of this thesis is to probe microscopic compositions and electronic structures at the high-κdielectric-semiconductor interfaces. The samples are prepared by electron beam evaporation, including Y2O3/Si, (Ga2O3-Gd2O3)/GaAs, Gd2O3/GaAs, Gd2O3/GaN and (G...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93268391737407621158 |