Probing the High-κ Dielectric-Semiconductor interfaces by X-ray Photoelectron Spectroscopy

• Main Authors: Yi-Ying Liao, 廖意瑛
• Other Authors: Tsong-Sheng Lay
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/93268391737407621158

碩士 === 國立中山大學 === 光電工程研究所 === 90 === The purpose of this thesis is to probe microscopic compositions and electronic structures at the high-κdielectric-semiconductor interfaces. The samples are prepared by electron beam evaporation, including Y2O3/Si, (Ga2O3-Gd2O3)/GaAs, Gd2O3/GaAs, Gd2O3/GaN and (Ga2O3-Gd2O3)/GaN. The thermal annealing effects on the interfacial properties have been investigated by depth-profiling X-ray photoelectron spectroscopy (XPS) with synchrotron radiation beam. The depth-profiling XPS data show the O-H bonding in all the measured oxide layers. For Y2O3/Si, the hydroxide can be removed by surface desorption at 300℃, while a Y-Si-O-H state maintained at the interface. The data suggests that the Y-Si-O-H state is possibly formed in the deposition process. For (Ga2O3-Gd2O3)/GaAs, the hydroxide can be removed by surface desorption at 100℃, and GaOx and GaOy intermediary states have been observed. For Gd2O3/GaAs, the hydroxide can be removed by surface desorption at 250℃, and a GaOx intermediary state has been observed, and no arsenic oxides have been detected. For Gd2O3/GaN and (Ga2O3-Gd2O3)/GaN, a GaOx intermediary state and little N-O bonding have been observed. Comparing the XPS relative intensity of the N 1s states, (Ga2O3-Gd2O3)/GaN shows a more stable interface than Gd2O3/GaN.