Study on Amorphous Silicon Carbide Barrier Dielectric Materials
碩士 === 國立中山大學 === 物理學系研究所 === 90 === In the generation of deep submicron semiconductor fabrication，transmission delay is primarily caused by the parasitic resistance and capacitance (RC) in the multilevel interconnects. Besides，electromigration is also a serious issue for the reliability of devices...
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94551691489117542359 |