Study of Ferroelectric Devices Integration
碩士 === 國立中山大學 === 物理學系研究所 === 90 === Abstract In recent years ferroelectric memory devices have attracted much attention from the viewpoint of the next generation of highly integrated circuits. Research and development in dynamic random access memory (DRAM) using high dielectric constant films are e...
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56297562359216040053 |