The Study of Formation and Thermal Stability of Nickel Silicides with a Thin Interlayer of Ge or Ir
碩士 === 國立清華大學 === 材料科學工程學系 === 90 === A thin interlayer of Ge (1.5, 3.0, 6.0 nm) or Ir (1.5, 3.0 nm) and the Ni thin film (30 nm) are deposited by the electron beam evaporation system on (001)Si substrates at room temperature. The formation and thermal stability of Ni silicides are charac...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/98453633409347618755 |