Study on Hot Carrier Degradation in Deep Sub-Micron Nitride Spacer and Ultra-Thin oxide
博士 === 國立清華大學 === 電子工程研究所 === 90 === Threshold voltage Vt extracted by gm-maximum extrapolation method under early stage hot carrier stress is proven to be an inappropriate method once electrons are trapped in nitride spacer. The trapping of electrons in nitride spacer increases the series drain res...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62646384124197967119 |