Electroless deposition for via filling
碩士 === 國立清華大學 === 電子工程研究所 === 90 === Abstract We developed the electrochemical displacement method of Cu seed-layer formed by replacing the amorphous-Si on Ta/SiO2/Si structure. The thickness of amorphous-Si varing from 200 Å ~ 400Å and HF concentration changing from 6% ~ 8% were performe...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94357823545951461926 |