TaSix Nano-Cluster Diffusion Barrier in Cu Metallization

碩士 === 國立清華大學 === 電子工程研究所 === 90 === TaSix nano-cluster thin films with a various composition of Ta and Si are fabricated in Ar gas with Ta + 1/2 Si or Ta5Si3 targets by radio frequency reactive sputtering deposition. The resistivity, chemical composition, crystalline microstructure, diff...

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Bibliographic Details
Main Authors: Da-Wei Lin, 林大為
Other Authors: Fon-Shan Huang
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/54244164866439175563