The fabriaction and electrical properties of metal(Al)/ferroelectric(Pb(Zr0.6,Ti0.4)O3)/insulator(Ta2O5)/Si field-effect transistors
碩士 === 國立清華大學 === 電子工程研究所 === 90 === Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) using an Al/Pb(Zr0.6,Ti0.4)O3 (PZT)/Ta2O5/Si structure were successfully fabricated. The threshold voltage is 0.96 V and the electron mobility is 82 cm2/V-s. The gate curre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63705280069925251054 |