Study of Nitridation on Floating Gate for Nonvolatile Memory Devices
碩士 === 國立清華大學 === 工程與系統科學系 === 90 === `In this thesis, nitridation on floating gate of nonvolatile memory devices is used to improve tunneling oxide quality and reliability. Samples, nitridized by NH3 with additional N2O annealing on poly-oxynitride (poly I) and then deposited with a CVD...
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24307782979217963803 |