The Characterization and Fabrication of Pyroelectric Infrared Sensor with CMOS Amplifier and Application of Thermal Image Array

• Main Authors: Jian-Hsing Lee, 李建興
• Other Authors: Chung Cheng Chang
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/32152764326512065272

碩士 === 國立海洋大學 === 電機工程學系 === 90 === In this paper the integrated pyroelectric infrared sensors have been made using a Lead-Titanate (PbTiO3, PT) thin film by RF sputtering method on differential CMOS amplifier. In addition, the back etching technology is used to increase the sensitivity of the device. According as the technology, we can fabricate PIR array to study the distribution of thermal image. According to the XRD measurement results, the PT thin film is the perovskite structure. From the hysteresis loop, its remanent polarization (Pr) is 20.8 C/cm2 and the coercive electric field is 79.365 KV/cm. Its pyroelectric coefficient is 5.112×10-4 C/m2K at 300℃. For the PIR performance measurement, the voltage response of the single PIR sensor is 600 VW-1 and the specific detectivity is 0.078×107 cmW-1 at 0.3 Hz. The voltage response of the CMOS PIR sensor is 1178.31 VW-1 and the specific detectivity is 1414.21 cmW-1 at 0.3 Hz. In addition, we use these results to fabricate 2-D 4x4 element PIR sensor. The sensor has been used for thermal image, test in this experiment.