三族氮化物金屬-半導體-金屬光偵測器之製作

• Main Author: 林彥儒
• Other Authors: 江海邦
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/72136885367547015379

碩士 === 國立海洋大學 === 光電科學研究所 === 90 === In this thesis, the GaN, AlGaN, and InGaN compound semiconductors were all grown on sapphire by metalorganic chemical vapor deposition (MOCVD). And the fabricated metal-semiconductor-metal (MSM) photodetectors were compared with different parameters, including finger width/spacing, and concentration of epitaxial layer. After thermal treatment, the characteristics of these MSM photodetectors were also investigated. The best responsivity and quantum efficiency of n-GaN (7.5E16 cm-3) MSM photodetector at 360 nm was 0.112 A/W and 38.64 % respectively while the finger width/spcing of the MSM photodetector was 2mm and operating voltage was 1V. The best responsivity and quantum efficiency of the AlGaN MSM photodetector at 350 nm were 0.127 A/W and 45 % respectively. The best responsivity of the InGaN MSM photodetector at 400 nm was 1.007 A/W.